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| S T U/D419S S amHop Microelectronics C orp. Mar,29, 2007 P -C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -40V F E AT UR E S ( m W ) Max ID -40A R DS (ON) S uper high dense cell design for low R DS (ON). R ugged and reliable. S urface Mount P ackage. E S D P rocteced D 9 @ V G S = -10V 12 @ V G S = -4.5V D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a (TA=25 C unles s otherwis e noted) S ymbol VDS VGS Limit -40 20 -40 -32 -100 -10 50 35 -55 to 175 W C Unit V V A A A A 25 C 70 C ID IDM IS PD TJ, TS TG Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 1 3 50 C /W C /W S T U/D419S P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS b Condition VGS = 0V, ID = -250uA VDS = -32V, VGS= 0V VGS = 20V, VDS = 0V VDS = VGS, ID =-250uA VGS =-10V, ID= -14A VGS =-4.5V, ID = -10A VDS =-5V, VGS = -10V VDS = -10V, ID = -14A Min Typ C Max Unit -40 -1 10 -1.0 -1.5 7 9.5 30 9 3550 710 420 -3.0 9 V uA uA V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 12 m ohm A S DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-15V, VGS = 0V f =1.0MHZ PF PF PF S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -15V ID = -14 A VGS = -10V R GE N = 3ohm VDS =-15V, ID =-14A,VGS =-10V VDS =-15V, ID =-14A,VGS =-4.5V 40 70 345 125 87 42 9 20 ns ns ns ns nC nC nC nC VDS =-15V, ID = -14A VGS =-10V 2 S T U/D419S E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = -10A Min Typ Max Unit -0.7 -1.2 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 50 V G S =-10V 40 15 V G S =-2.5V V G S =-4.5V 20 - ID, Drain C urrent(A) 30 -ID, Drain C urrent (A) 10 20 V G S =-2V 10 0 5 -55 C 1 0 T j=125 C 0 0.5 1.0 1.5 25 C 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 24 20 F igure 2. Trans fer C haracteris tics 1.8 R DS (ON), On-R es is tance Normalized 1.6 1.4 V G S =-10V ID=-14A R DS (on) (m ) 16 12 V G S =4.5V 8 V G S =10V 4 0 1.2 V G S =-4V ID=-10A 1.0 0.8 1 5 10 15 20 25 0 25 50 75 100 125 150 T j( C ) -ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T U/D419S B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 30 125 C 25 75 C F igure 6. B reakdown V oltage V ariation with T emperature 20.0 125 C 25 C ID=-14A 15.0 -Is , S ource-drain current (A) 10.0 5.0 R DS (on) (m ) 20 15 10 5 0 25 C 75 C 1.0 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 -V G S , G ate-S ource Voltage (V ) -V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D419S -V G S , G ate to S ource V oltage (V ) 4800 4000 10 8 6 4 2 0 VDS =-15V ID=-14A C is s C , C apacitance (pF ) 3200 2400 1600 C os s 800 C rs s 0 0 5 10 15 20 25 30 6 0 12.5 25 37.5 50 62.5 75 Qg, T otal G ate C harge (nC ) 87.5 100 -V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance F igure 10. G ate C harge 6000 S witching T ime (ns ) ID, Drain C urrent (A) 140 10 R DS (O N )L im i t 10 1000 600 100 T D(off) ms 10 0m Tf Tr s 1 1s DC T D(on) 10 1 3 6 10 VDS=-15V,ID=-14A VGS=-10V 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 30 50 60 100 300 600 R g, G ate R es is tance () -V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 P DM 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 t1 t2 1. 2. 3. 4. 10 10 10 R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T U/D419S 6 S T U/D419S 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF . 0.090 82 56 6 0.024 BSC 398 0.064 33 REF . 7 S T U/D419S TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT: PACKAGE TO-252 (16 A0 6.80 0.1 B0 10.3 0.1 K0 2.50 0.1 D0 2 D1 1.5 + 0.1 -0 E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8. 0 0.1 P1 4. 0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252 Reel S UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2.2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R V 8 |
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